Welcome

Brolis Semiconductors Ltd. offers high-throughput molecular beam epitaxy service of arsenides and antimonides on GaAs, GaSb and InP substrates. Our key technology lies in:

• Growth of mixed group-V antimonides
• Growth of quinternary heterostructures
• Control of mixed anion interfaces
• Long-wavelength infrared semiconductor lasers on GaSb.

Our high-capacity multi-wafer MBE capabilities offer extreme competitiveness in terms of volume, uniformity and cost-effectiveness.