Brolis Semiconductors offers molecular beam epitaxial growth of custom structures on substrates up to 6 inch in diameter.
We can grow any combination of AlGaInAsSb material system on the substrate of your choice.
Our key experience include:
- - Growth of arsenides and antimonides;
- - Growth of mixed group-V quaternary (GaInAsSb, AlGaAsSb, AlInAsSb) and quinternary (AlGaInAsSb) alloys;
- - Metamorphic growth of InAs, InSb, GaSb and related materials on GaAs;
- - Growth of type-II superlattice structures with superior crystalline quality;
- - GaAs, InAs, InSb HEMT structures.
We can cooperate in several ways:
- Customer specifies the desired specification – We grow it!
- Customer specifies desired band structure, and doping levels – We pick the right materials and grow it!
Every wafer is thoroughly tested before, during and after growth to ensure that we are in-spec all the time. In-house characterisation include: PL, FTIR, HRXRD, Hall, low-frequency noise, reflection, transmission, low-T optical measurements, Nomarski microscopy.
Our world-leading expertise in molecular beam epitaxy is at Your service!
For more information, please get in touch with us: SALES
